EFFECTS OF ANNEALING ON THE DARK CONDUCTIVITY AND PHOTOCONDUCTIVITY OF RF SPUTTERED HYDROGENATED AMORPHOUS-SILICON

被引：9

作者：

OZTURK, MC ^{[1
]}

THOMPSON, MG ^{[1
]}

机构：

[1] MICHIGAN TECHNOL UNIV,DEPT ELECT ENGN,HOUGHTON,MI 49931

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 09期

关键词：

D O I：

10.1063/1.94933

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：916 / 918

页数：3

共 12 条

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[7] EFFECT OF HYDROGEN CONTENT ON THE PROPERTIES OF REACTIVELY SPUTTERED AMORPHOUS SI-H [J].

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[8] CONTROL OF DIHYDRIDE BOND DENSITY IN REACTIVE SPUTTERED AMORPHOUS-SILICON [J].

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[9]

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[10] SPUTTERED HYDROGENATED AMORPHOUS SILICON [J].

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