N-INGAAS SCHOTTKY DIODE WITH CURRENT TRANSPORT ALONG 2-DEG CHANNEL

被引：6

作者：

KORDOS, P

MARSO, M

FOX, A

HOLLFELDER, M

LUTH, H

机构：

[1] Institut für Schicht- und Ionentechnik, Forschungszentrum, W-5170 Jülich, Jülich

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 18期

关键词：

DIODES; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19921074

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Planar pseudomorphic InGaAs Schottky diodes with current transport along the 2-DEG channel were prepared and their DC properties are described. The I-V behaviour is similar to diodes without 2-DEG (n = 1.12. phi(B) = 0.49 eV), but the C-V characteristics show stronger capacitance variation. On double-barrier 2-DEG Schottky diodes the capacitance ratio C(max)/C(min) = 42 and the varactor sensitivity S(1 V) = 3.75 are obtained and for optimised devices an RC cutoff frequency higher than 2 THz is expected.

引用

页码：1689 / 1690

页数：2

共 5 条

[1] HHARDTDEGEN H, 1992, J CRYST GROWTH, V116, P521
[2] INOUE K, 1992, FOURTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, P10, DOI 10.1109/ICIPRM.1992.235698
[3] KORDOS P, 1992, J APPL PHYS 0915
[4] MODELING OF PLANAR VARACTOR FREQUENCY-MULTIPLIER DEVICES WITH BLOCKING BARRIERS
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[5] A NOVEL SCHOTTKY 2-DEG DIODE FOR MILLIMETER-WAVE AND SUBMILLIMETER-WAVE MULTIPLIER APPLICATIONS
PEATMAN, WCB
CROWE, TW
SHUR, M
[J]. IEEE ELECTRON DEVICE LETTERS, 1992, 13 (01) : 11 - 13

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