Synthesis and corrosion properties of silicon nitride films by ion beam assisted deposition

被引:17
作者
Baba, K [1 ]
Hatada, R [1 ]
Emmerich, R [1 ]
Enders, B [1 ]
Wolf, GK [1 ]
机构
[1] INST PHYS CHEM, D-69120 HEIDELBERG, GERMANY
关键词
D O I
10.1016/0168-583X(95)00686-9
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Silicon nitride films SiNx were deposited on 316L austenitic stainless steel substrates by silicon evaporation and simultaneous nitrogen ion irradiation with an acceleration voltage of 2 kV. In order to study the influence of the nitrogen content on changes in stoichiometry, structure, morphology, thermal oxidation behaviour and corrosion behaviour, the atom to ion transport ratio was systematically varied. The changes of binding states and the stoichiometry were evaluated with XPS and AES analysis. A maximum nitrogen content was reached with a Si/N transport ratio lower than 2. The films are chemically inert when exposed to laboratory atmosphere up to a temperature of more than 1000 degrees C, XRD and SEM measurements show amorphous and featureless films for transport ratios Si/N from 1 up to 10, The variation of the corrosion behaviour of coated stainless steel substrates in sulphuric acid and hydrochloric acid shows a minimum at medium transport ratios. This goes parallel with changes in porosity and adhesion. Additional investigations showed that titanium implantation as an intermediate step improves the corrosion resistance considerably.
引用
收藏
页码:106 / 109
页数:4
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