EXCELLENT CHARGE-TRAPPING PROPERTIES OF ULTRATHIN REOXIDIZED NITRIDED OXIDES PREPARED BY RAPID THERMAL-PROCESSING

被引：36

作者：

HORI, T

IWASAKI, H

机构：

[1] Matsushita Electric Industrial Co, Moriguchi, Jpn, Matsushita Electric Industrial Co, Moriguchi, Jpn

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 04期

关键词：

RAPID THERMAL PROCESSING - REOXIDIZED NITRIDED OXIDES - ULTRATHIN OXIDES;

D O I：

10.1109/55.678

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：168 / 170

页数：3

共 13 条

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[2] INTERFACE STATES AND FIXED CHARGES IN NANOMETER-RANGE THIN NITRIDED OXIDES PREPARED BY RAPID THERMAL ANNEALING [J].

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ESAKI, H .

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HORI T, 1987, VLSI S TECH DIG, P63

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Hsu F.-C., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P96

[8] ADVANTAGES OF THERMAL NITRIDE AND NITROXIDE GATE FILMS IN VLSI PROCESS [J].

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[9]

Jayaraman R., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P668

[10]

Lai S. K., 1983, International Electron Devices Meeting 1983. Technical Digest, P190

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