MODEL SEMICONDUCTOR SURFACES - ARSENIC TERMINATION OF THE GE(111), SI(111) AND SI(100) SURFACES

被引：6

作者：

BRINGANS, RD

UHRBERG, RIG

OLMSTEAD, MA

BACHRACH, RZ

NORTHRUP, JE

机构：

来源：

PHYSICA SCRIPTA | 1987年 / T17卷

关键词：

D O I：

10.1088/0031-8949/1987/T17/001

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：7 / 12

页数：6

共 17 条

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[2] SURFACE BANDS FOR SINGLE-DOMAIN 2X1 RECONSTRUCTED SI(100) AND SI(100)-AS - PHOTOEMISSION RESULTS FOR OFF-AXIS CRYSTALS [J].

BRINGANS, RD ;

UHRBERG, RIG ;

OLMSTEAD, MA ;

BACHRACH, RZ .

PHYSICAL REVIEW B, 1986, 34 (10) :7447-7450

[3] SURFACE BAND DISPERSION OF GE(111)C(2X8) AND GE(111)-AS 1X1 [J].

BRINGANS, RD ;

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BACHRACH, RZ ;

NORTHRUP, JE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :1380-1384

[4] ARSENIC-TERMINATED GE(111) - AN IDEAL 1 X 1 SURFACE [J].

BRINGANS, RD ;

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NORTHRUP, JE .

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[5] SURFACE AND BULK ELECTRONIC-STRUCTURE OF GE(111) C(2X8) AND GE(111)-AS 1X1 [J].

BRINGANS, RD ;

UHRBERG, RIG ;

BACHRACH, RZ .

PHYSICAL REVIEW B, 1986, 34 (04) :2373-2380

[6]

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[7] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].

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COHEN, ML .

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[8] POLAR HETEROJUNCTION INTERFACES [J].

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GRANT, RW .

PHYSICAL REVIEW B, 1978, 18 (08) :4402-4410

[9] NEW SURFACE-STATES ON THE ANNEALED GE(111) SURFACE [J].

NICHOLLS, JM ;

HANSSON, GV ;

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FLODSTROM, SA .

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[10]

OLMSTEAD MA, 1986, PHYS REV B, V34, P6401

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