MODEL SEMICONDUCTOR SURFACES - ARSENIC TERMINATION OF THE GE(111), SI(111) AND SI(100) SURFACES

被引:6
作者
BRINGANS, RD
UHRBERG, RIG
OLMSTEAD, MA
BACHRACH, RZ
NORTHRUP, JE
机构
来源
PHYSICA SCRIPTA | 1987年 / T17卷
关键词
D O I
10.1088/0031-8949/1987/T17/001
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:7 / 12
页数:6
相关论文
共 17 条
[1]   ELECTRONIC-STRUCTURE OF GE(111) AND GE(111)-H FROM ANGLE-RESOLVED PHOTOEMISSION MEASUREMENTS [J].
BRINGANS, RD ;
HOCHST, H .
PHYSICAL REVIEW B, 1982, 25 (02) :1081-1089
[2]   SURFACE BANDS FOR SINGLE-DOMAIN 2X1 RECONSTRUCTED SI(100) AND SI(100)-AS - PHOTOEMISSION RESULTS FOR OFF-AXIS CRYSTALS [J].
BRINGANS, RD ;
UHRBERG, RIG ;
OLMSTEAD, MA ;
BACHRACH, RZ .
PHYSICAL REVIEW B, 1986, 34 (10) :7447-7450
[3]   SURFACE BAND DISPERSION OF GE(111)C(2X8) AND GE(111)-AS 1X1 [J].
BRINGANS, RD ;
UHRBERG, RIG ;
BACHRACH, RZ ;
NORTHRUP, JE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :1380-1384
[4]   ARSENIC-TERMINATED GE(111) - AN IDEAL 1 X 1 SURFACE [J].
BRINGANS, RD ;
UHRBERG, RIG ;
BACHRACH, RZ ;
NORTHRUP, JE .
PHYSICAL REVIEW LETTERS, 1985, 55 (05) :533-536
[5]   SURFACE AND BULK ELECTRONIC-STRUCTURE OF GE(111) C(2X8) AND GE(111)-AS 1X1 [J].
BRINGANS, RD ;
UHRBERG, RIG ;
BACHRACH, RZ .
PHYSICAL REVIEW B, 1986, 34 (04) :2373-2380
[6]  
BRINGANS RD, 1986, IN PRESS 18TH P INT
[7]   NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].
CHELIKOWSKY, JR ;
COHEN, ML .
PHYSICAL REVIEW B, 1976, 14 (02) :556-582
[8]   POLAR HETEROJUNCTION INTERFACES [J].
HARRISON, WA ;
KRAUT, EA ;
WALDROP, JR ;
GRANT, RW .
PHYSICAL REVIEW B, 1978, 18 (08) :4402-4410
[9]   NEW SURFACE-STATES ON THE ANNEALED GE(111) SURFACE [J].
NICHOLLS, JM ;
HANSSON, GV ;
UHRBERG, RIG ;
FLODSTROM, SA .
PHYSICAL REVIEW B, 1986, 33 (08) :5555-5559
[10]  
OLMSTEAD MA, 1986, PHYS REV B, V34, P6401