DEPENDENCE OF OHMIC CONTACT QUALITY ON AU-GE ALLOY THICKNESS FOR N-TYPE GAAS

被引：4

作者：

KALKUR, TS

DELL, J

NASSIBIAN, AG

机构：

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1984年 / 57卷 / 05期

关键词：

D O I：

10.1080/00207218408938957

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：729 / 736

页数：8

共 12 条

[1] CONTACT RESISTANCE AND CONTACT RESISTIVITY [J].

BERGER, HH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (04) :507-&

[2]

HEIBLUM M, 1982, SOLID ST ELECTRON, V25, P499

[3]

Howes M.J, 1981, RELIABILITY DEGRADAT

[4] THE ROLE OF GERMANIUM IN EVAPORATED AU-GE OHMIC CONTACTS TO GAAS [J].

ILIADIS, A ;

SINGER, KE .

SOLID-STATE ELECTRONICS, 1983, 26 (01) :7-&

[5] RELIABILITY OF AUGE-PT AND AUGE-NI OHMIC CONTACTS ON GAAS [J].

LEE, CP ;

WELCH, BM ;

FLEMING, WP .

ELECTRONICS LETTERS, 1981, 17 (12) :407-408

[6] THE CHARACTERISTICS OF AU-GE-BASED OHMIC CONTACTS TO N-GAAS INCLUDING THE EFFECTS OF AGING [J].

MARLOW, GS ;

DAS, MB ;

TONGSON, L .

SOLID-STATE ELECTRONICS, 1983, 26 (04) :259-&

[7] VOLATILE COMPONENT LOSS AND CONTACT RESISTANCE OF METALS ON GAAS AND GAP DURING ANNEALING [J].

MOJZES, I ;

SEVESTYEN, T ;

SZIGETHY, D .

SOLID-STATE ELECTRONICS, 1982, 25 (06) :449-&

[8] LIQUID-PHASE EPITAXIAL-GROWTH OF GAAS FROM AU-GE-NI MELTS [J].

OTSUBO, M ;

KUMABE, H ;

MIKI, H .

SOLID-STATE ELECTRONICS, 1977, 20 (07) :617-621

[9] OBTAINING THE SPECIFIC CONTACT RESISTANCE FROM TRANSMISSION-LINE MODEL MEASUREMENTS [J].

REEVES, GK ;

HARRISON, HB .

ELECTRON DEVICE LETTERS, 1982, 3 (05) :111-113

[10] MODELS FOR OHMIC CONTACTS ON GRADED CRYSTALLINE OR AMORPHOUS HETEROJUNCTIONS [J].

SEBESTYEN, T .

SOLID-STATE ELECTRONICS, 1982, 25 (07) :543-550

← 1 2 →