EXCIMER LASER LITHOGRAPHY - INTENSITY-DEPENDENT RESIST DAMAGE

被引：5

作者：

DAVIS, GM

GOWER, MC

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 09期

关键词：

D O I：

10.1109/EDL.1986.26466

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：543 / 545

页数：3

共 10 条

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[8] RECIPROCITY BEHAVIOR OF PHOTORESISTS IN EXCIMER LASER LITHOGRAPHY [J].

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[9] KINETICS OF THE ABLATIVE PHOTO-DECOMPOSITION OF ORGANIC POLYMERS IN THE FAR ULTRAVIOLET (193 NM) [J].

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[10]

BCE3002A0680S3 CAN I

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