STRESS IN THICK DIAMOND FILMS DEPOSITED ON SILICON

被引:27
作者
VANDAMME, NS [1 ]
NAGLE, DC [1 ]
WINZER, SR [1 ]
机构
[1] MARTIN MARIETTA CORP LABS,BALTIMORE,MD 21227
关键词
D O I
10.1063/1.104722
中图分类号
O59 [应用物理学];
学科分类号
摘要
20-mu-m-thick diamond films deposited on Si single-crystal substrates by microwave plasma-enhanced chemical vapor deposition showed significant curvature. The internal stress distribution was estimated using the model of an elastic bimetallic strip. The results indicate that the films are under a mean tensile stress of 1.1 GPa, and are discussed using information from x-ray diffraction and Raman spectra.
引用
收藏
页码:2919 / 2920
页数:2
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