STRESS-INDUCED SPECTRAL CHANGES IN RAMAN-SPECTRA OF N-GAAS ENCAPSULATED WITH SI3N4 FILMS

被引：4

作者：

HASHIMOTO, A

KAMIJOH, T

TAKANO, H

SAKUTA, M

机构：

[1] OKI Electric Industry Co, Tokyo, Jpn, OKI Electric Industry Co, Tokyo, Jpn

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 01期

关键词：

D O I：

10.1149/1.2100397

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：153 / 156

页数：4

共 14 条

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