INFRARED-ABSORPTION SPECTRUM OF BORON-DOPED SILICON

被引:7
作者
LEIGH, RS
SANGSTER, MJL
机构
来源
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1982年 / 15卷 / 11期
关键词
D O I
10.1088/0022-3719/15/11/003
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:L317 / L321
页数:5
相关论文
共 21 条
  • [1] 1-PHONON BAND-MODE ABSORPTION BY IMPURITY RESONANCES IN DIAMOND AND SILICON
    ANGRESS, JF
    GOODWIN, AR
    SMITH, SD
    [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1968, 308 (1492): : 111 - &
  • [2] A STUDY OF VIBRATIONS OF BORON AND PHOSPHORUS IN SILICON BY INFRA-RED ABSORPTION
    ANGRESS, JF
    GOODWIN, AR
    SMITH, SD
    [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1965, 287 (1408): : 64 - &
  • [3] RESONANT AND LOCALIZED MODES DUE TO BORON IN GALLIUM-ARSENIDE
    ANGRESS, JF
    GLEDHILL, GA
    NEWMAN, RC
    [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1980, 41 (04) : 341 - 344
  • [4] BALKANSKI M, 1964, 7TH P INT C PHYS SEM, P1021
  • [5] INFRARED-ABSORPTION AND RAMAN-SPECTRA OF LI-COMPENSATED B-DOPED SI
    CARDONA, M
    SHEN, SC
    VARMA, SP
    [J]. PHYSICAL REVIEW B, 1981, 23 (10): : 5329 - 5334
  • [6] CHRENKO RM, 1965, PHYS REV, V138, P1775
  • [7] THEORY OF OPTICAL ABSORPTION BY VIBRATIONS OF DEFECTS IN SILICON
    DAWBER, PG
    ELLIOTT, RJ
    [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 81 (521): : 453 - &
  • [8] Dolling G., 1963, INELASTIC SCATTERING, VII, P37
  • [9] RESONANT AND GAP MODES DUE TO B IN GAP
    GLEDHILL, GA
    KUDHAIL, SS
    NEWMAN, RC
    ZHANG, GZ
    [J]. INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES, 1981, 2 (04): : 849 - 858
  • [10] EFFECT OF INVARIANCE REQUIREMENTS ON ELASTIC STRAIN ENERGY OF CRYSTALS WITH APPLICATION TO DIAMOND STRUCTURE
    KEATING, PN
    [J]. PHYSICAL REVIEW, 1966, 145 (02): : 637 - &