ELEMENTAL BORON DOPING BEHAVIOR IN SILICON MOLECULAR-BEAM EPITAXY

被引：24

作者：

PARRY, CP ^{[1
]}

NEWSTEAD, SM ^{[1
]}

BARLOW, RD ^{[1
]}

AUGUSTUS, P ^{[1
]}

KUBIAK, RAA ^{[1
]}

DOWSETT, MG ^{[1
]}

WHALL, TE ^{[1
]}

PARKER, EHC ^{[1
]}

机构：

[1] PLESSEY RES,TOWCESTER NN12 8EQ,NORTHANTS,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 05期

关键词：

D O I：

10.1063/1.104614

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Boron-doped Si epilayers were grown by molecular beam epitaxy (MBE) using an elemental boron source, at levels up to 2 x 10(20) cm-3, to elucidate profile control and electrical activation over the growth temperature range 450-900-degrees-C. Precipitation and surface segregation effects were observed at doping levels of 2 x 10(20) cm-3 for growth temperatures above 600-degrees-C. At growth temperatures below 600-degrees-C, excellent profile control was achieved with complete electrical activation at concentrations of 2 x 10(20) cm-3, corresponding to the optimal MBE growth conditions for a range of Si/Si(x)Ge1-x heterostructures.

引用

页码：481 / 483

页数：3

共 6 条

[1] BORON SURFACE SEGREGATION IN SILICON MOLECULAR-BEAM EPITAXY [J].