HYDROGEN PASSIVATION OF SHALLOW ACCEPTORS AND DONORS IN C-SI - COMPARISONS AND TRENDS

[31] 2ND-ROW MOLECULAR-ORBITAL CALCULATIONS .5. MINIMAL BASIS INDO FOR NA-CL [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1978, 100 (09) : 2670 - 2678

[32] Gorelkinskii Yu. V., 1987, Soviet Technical Physics Letters, V13, P45

[33] SELF-CONSISTENT-FIELD WAVEFUNCTIONS FOR COMPLEX MOLECULES - APPROXIMATION OF PARTIAL RETENTION OF DIATOMIC DIFFERENTIAL OVERLAP [J]. JOURNAL OF CHEMICAL PHYSICS, 1973, 58 (04) : 1569 - 1591

[34] SPEED AND ACCURACY IN MOLECULAR-ORBITAL CALCULATIONS - COMPARISON OF CNDO-2, INDO, PRDDO, STO-3G, AND OTHER METHODS, INCLUDING AAMOM, VRDDO, AND ESE MO [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1978, 100 (21) : 6595 - 6608

[35] BULK ACCEPTOR COMPENSATION PRODUCED IN PARA-TYPE SILICON AT NEAR-AMBIENT TEMPERATURES BY A H2O PLASMA [J]. APPLIED PHYSICS LETTERS, 1984, 44 (06) : 606 - 608

[36] SELF-CONSISTENT MOLECULAR-ORBITAL METHODS .I. USE OF GAUSSIAN EXPANSIONS OF SLATER-TYPE ATOMIC ORBITALS [J]. JOURNAL OF CHEMICAL PHYSICS, 1969, 51 (06) : 2657 - +

[37] STRESS-INDUCED HYDROGEN MOTION IN BORON-DOPED CRYSTALLINE SILICON [J]. SOLID STATE COMMUNICATIONS, 1988, 68 (12) : 1085 - 1088

[38] MICROSCOPIC STRUCTURE OF BORON-HYDROGEN COMPLEXES IN CRYSTALLINE SILICON [J]. PHYSICAL REVIEW B, 1988, 38 (17): : 12668 - 12671

[39] HUHEEY JE, 1983, INORG CHEM

[40] INTERSTITIAL HYDROGEN AND NEUTRALIZATION OF SHALLOW-DONOR IMPURITIES IN SINGLE-CRYSTAL SILICON [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (07) : 769 - 772

[31] 2ND-ROW MOLECULAR-ORBITAL CALCULATIONS .5. MINIMAL BASIS INDO FOR NA-CL [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1978, 100 (09) : 2670 - 2678

[32] Gorelkinskii Yu. V., 1987, Soviet Technical Physics Letters, V13, P45

[33] SELF-CONSISTENT-FIELD WAVEFUNCTIONS FOR COMPLEX MOLECULES - APPROXIMATION OF PARTIAL RETENTION OF DIATOMIC DIFFERENTIAL OVERLAP [J]. JOURNAL OF CHEMICAL PHYSICS, 1973, 58 (04) : 1569 - 1591

[34] SPEED AND ACCURACY IN MOLECULAR-ORBITAL CALCULATIONS - COMPARISON OF CNDO-2, INDO, PRDDO, STO-3G, AND OTHER METHODS, INCLUDING AAMOM, VRDDO, AND ESE MO [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1978, 100 (21) : 6595 - 6608

[35] BULK ACCEPTOR COMPENSATION PRODUCED IN PARA-TYPE SILICON AT NEAR-AMBIENT TEMPERATURES BY A H2O PLASMA [J]. APPLIED PHYSICS LETTERS, 1984, 44 (06) : 606 - 608

[36] SELF-CONSISTENT MOLECULAR-ORBITAL METHODS .I. USE OF GAUSSIAN EXPANSIONS OF SLATER-TYPE ATOMIC ORBITALS [J]. JOURNAL OF CHEMICAL PHYSICS, 1969, 51 (06) : 2657 - +

[37] STRESS-INDUCED HYDROGEN MOTION IN BORON-DOPED CRYSTALLINE SILICON [J]. SOLID STATE COMMUNICATIONS, 1988, 68 (12) : 1085 - 1088

[38] MICROSCOPIC STRUCTURE OF BORON-HYDROGEN COMPLEXES IN CRYSTALLINE SILICON [J]. PHYSICAL REVIEW B, 1988, 38 (17): : 12668 - 12671

[39] HUHEEY JE, 1983, INORG CHEM

[40] INTERSTITIAL HYDROGEN AND NEUTRALIZATION OF SHALLOW-DONOR IMPURITIES IN SINGLE-CRYSTAL SILICON [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (07) : 769 - 772