CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY OF ZN DIFFUSION INDUCED DISORDERING OF GAALAS-GAAS MULTIQUANTUM-WELL STRUCTURES

被引：7

作者：

ISHIDA, K

OHTA, T

SEMURA, S

NAKASHIMA, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1985年 / 24卷 / 08期

关键词：

D O I：

10.1143/JJAP.24.L620

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L620 / L622

页数：3

共 9 条

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[2] GAALAS BURIED MULTIQUANTUM WELL LASERS FABRICATED BY DIFFUSION-INDUCED DISORDERING [J].

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[3]

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[5]

LEE JW, 1984, J ELECTRON MATER, V13, P148

[6] STUDY ON ZN DIFFUSION IN GAAS AND ALXGA1-XAS(X LESS-THAN-OR-EQUAL-TO 0.4) AT TEMPERATURES FROM 726-DEGREES-C TO 566-DEGREES-C [J].

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[7]

Matsumoto Y., COMMUNICATION

[8] DISORDER OF AN ALXGA1-XAS-GAAS SUPERLATTICE BY DONOR DIFFUSION [J].

MEEHAN, K ;

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BURNHAM, RD .

APPLIED PHYSICS LETTERS, 1984, 45 (05) :549-551

[9] TRANSMISSION ELECTRON-MICROSCOPY OF INTERFACES IN 3-5 COMPOUND SEMICONDUCTORS [J].

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