STRUCTURAL-PROPERTIES AND COMPOSITION CONTROL OF GAASYP1-Y GROWN BY MBE ON VPE GAAS0.63P0.37 SUBSTRATES

被引：18

作者：

WOODBRIDGE, K

GOWERS, JP

JOYCE, BA

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1982年 / 60卷 / 01期

关键词：

D O I：

10.1016/0022-0248(82)90168-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：21 / 28

页数：8

共 20 条

[1] VAPOR PRESSURES AND PHASE EQUILIBRIA IN GA-AS SYSTEM [J].

ARTHUR, JR .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (11) :2257-&

[2] GAAS, GAP, AND GAASXP1-X EPITAXIAL FILMS GROWN BY MOLECULAR BEAM DEPOSITION [J].

ARTHUR, JR ;

LEPORE, JJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04) :545-&

[3] GAAS-ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXY [J].

CHO, AY ;

CASEY, HC .

APPLIED PHYSICS LETTERS, 1974, 25 (05) :288-290

[4] ARSENIC STABILIZATION OF INP SUBSTRATES FOR GROWTH OF GAXIN1-XAS LAYERS BY MOLECULAR-BEAM EPITAXY [J].

DAVIES, GJ ;

HECKINGBOTTOM, R ;

OHNO, H ;

WOOD, CEC ;

CALAWA, AR .

APPLIED PHYSICS LETTERS, 1980, 37 (03) :290-292

[5] COMPOSITION EFFECTS IN THE GROWTH OF GA(IN)ASYP1-Y ALLOYS BY MBE [J].

FOXON, CT ;

JOYCE, BA ;

NORRIS, MT .

JOURNAL OF CRYSTAL GROWTH, 1980, 49 (01) :132-140

[6]

FOXON CT, COMMUNICATION

[7] PHASE-EQUILIBRIA AND VAPOR-PRESSURES IN GA + P SYSTEM [J].

ILEGEMS, M ;

PANISH, MB ;

ARTHUR, JR .

JOURNAL OF CHEMICAL THERMODYNAMICS, 1974, 6 (02) :157-177

[8] CONTINUOUS ROOM-TEMPERATURE PHOTOPUMPED LASER OPERATION OF VISIBLE-SPECTRUM LPE IN1-XGAXP1-ZASZ (LAMBDA APPROXIMATELY 6700 A) [J].

KIRCHOEFER, SW ;

REZEK, EA ;

VOJAK, BA ;

HOLONYAK, N ;

FINN, D ;

KEUNE, DL ;

ROSSI, JA .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :161-166

[9]

KRESSEL H, 1978, J APPL PHYS, V49, P3140, DOI 10.1063/1.325307

[10]

KUNZEL H, 1980, APPL PHYS LETT, V37, P416, DOI 10.1063/1.91927

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