PHOTOPLASTIC EFFECT IN SILICON

被引:61
作者
KUSTERS, KH
ALEXANDER, H
机构
来源
PHYSICA B & C | 1983年 / 116卷 / 1-3期
关键词
D O I
10.1016/0378-4363(83)90312-1
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:594 / 599
页数:6
相关论文
共 15 条
[11]   DISLOCATION VELOCITIES AND ELECTRONIC DOPING IN SILICON [J].
KULKARNI, SB ;
WILLIAMS, WS .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (10) :4318-4325
[12]   CHARGED IMPURITY EFFECTS ON DEFORMATION OF DISLOCATION-FREE GERMANIUM [J].
PATEL, JR ;
CHAUDHURI, AR .
PHYSICAL REVIEW, 1966, 143 (02) :601-+
[13]   ELECTRONIC EFFECTS ON DISLOCATION VELOCITIES IN HEAVILY DOPED SILICON [J].
PATEL, JR ;
TESTARDI, LR ;
FREELAND, PE .
PHYSICAL REVIEW B, 1976, 13 (08) :3548-3557
[14]   DOES DISLOCATION VELOCITY IN GERMANIUM DEPEND ON OPTICAL ILLUMINATION [J].
SCHAUMBU.H ;
SCHROTER, W .
PHYSICS LETTERS A, 1969, A 30 (01) :21-&
[15]  
SCHMIEDEL H, 1980, THESIS KOLN