ELLIPSOMETRIC AND ION BACKSCATTERING MEASUREMENTS OF THE PROPERTIES OF SILICON-ON-INSULATOR STRUCTURE FORMED BY THERMALLY ACTIVATED REDISTRIBUTION OF HIGH-DOSE ION-IMPLANTED NITROGEN

被引：5

作者：

KHANH, NQ

FRIED, M

BATTISTIG, G

LACZIK, Z

LOHNER, T

JAROLI, E

SCHILLER, V

GUYLAI, J

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1988年 / 108卷 / 01期

关键词：

D O I：

10.1002/pssa.2211080159

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K35 / K40

页数：6

共 17 条

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