GAP DEFECT STATES IN AMORPHOUS THIN-FILMS

[1] ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1976, 36 (20) : 1197 - 1200

[2] MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (15) : 953 - 955

[3] SIMPLE BAND MODEL FOR AMORPHOUS SEMICONDUCTING ALLOYS [J]. PHYSICAL REVIEW LETTERS, 1969, 22 (20) : 1065 - +

[4] VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1976, 37 (22) : 1504 - 1507

[5] DEFECT CHEMISTRY AND STATES IN THE GAP OF LONE-PAIR SEMICONDUCTORS [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1978, 31 (1-2) : 223 - 240

[6] DEFECT CHEMISTRY OF LONE-PAIR SEMICONDUCTORS [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 37 (02): : 199 - 215

[7] PHOTOCURRENT TRANSIENT SPECTROSCOPY - MEASUREMENT OF THE DENSITY OF LOCALIZED STATES IN ALPHA-AS2SE3 [J]. PHYSICAL REVIEW LETTERS, 1981, 46 (21) : 1421 - 1424

[8] LOCALIZED STATES IN GAP OF AMORPHOUS-SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1976, 36 (24) : 1469 - 1472

[9] STATES IN GAP IN GLASSY SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1975, 35 (19) : 1293 - 1296

[10] TOYOZAWA Y, 1981, TECH REP ISSP TOKY A, V1112

[1] ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1976, 36 (20) : 1197 - 1200

[2] MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (15) : 953 - 955

[3] SIMPLE BAND MODEL FOR AMORPHOUS SEMICONDUCTING ALLOYS [J]. PHYSICAL REVIEW LETTERS, 1969, 22 (20) : 1065 - +

[4] VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1976, 37 (22) : 1504 - 1507

[5] DEFECT CHEMISTRY AND STATES IN THE GAP OF LONE-PAIR SEMICONDUCTORS [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1978, 31 (1-2) : 223 - 240

[6] DEFECT CHEMISTRY OF LONE-PAIR SEMICONDUCTORS [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 37 (02): : 199 - 215

[7] PHOTOCURRENT TRANSIENT SPECTROSCOPY - MEASUREMENT OF THE DENSITY OF LOCALIZED STATES IN ALPHA-AS2SE3 [J]. PHYSICAL REVIEW LETTERS, 1981, 46 (21) : 1421 - 1424

[8] LOCALIZED STATES IN GAP OF AMORPHOUS-SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1976, 36 (24) : 1469 - 1472

[9] STATES IN GAP IN GLASSY SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1975, 35 (19) : 1293 - 1296

[10] TOYOZAWA Y, 1981, TECH REP ISSP TOKY A, V1112