DEGRADATION OF N2O-ANNEALED MOSFET CHARACTERISTICS IN RESPONSE TO DYNAMIC OXIDE STRESSING

被引：7

作者：

CHEN, JC

LIU, ZH

KRICK, JT

KO, PK

HU, CM

机构：

[1] Univ of California, Berkeley, CA

来源：

IEEE ELECTRON DEVICE LETTERS | 1993年 / 14卷 / 05期

关键词：

D O I：

10.1109/55.215175

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The performance of n-MOSFET's with furnace N2O-annealed gate oxides under dynamic Fowler-Nordheim bipolar stress was studied and compared with that of conventional oxide (OX). Time-dependent dielectric breakdown at high frequency was shown to be improved for the N2O-annealed devices compared with that for devices with OX. In addition, a smaller V(t) shift for nitrided samples after stress was found. The shift decreased with increasing stressing frequency and annealing temperature. Measurements of both G(m) and D(it) revealed a ''peak'' frequency at which the degradation was the worst. A hole trapping/migration model has been proposed to explain this.

引用

页码：225 / 227

页数：3

共 7 条

[1]

CHEN IC, 1985, IEEE T ELECTRON DEV, V32, P413, DOI 10.1109/T-ED.1985.21957

[2]

KOBU R, 1988, J ELECTROCHEM SOC, V135, P144

[3] POSITIVE-CHARGE TRAPPING IN NITRIDED OXIDE AND REOXIDIZED NITRIDED OXIDE GATE DIELECTRICS [J].