SURFACE-DIFFUSION AND ISLANDING IN SEMICONDUCTOR HETEROSTRUCTURES - GE ON SI

被引：6

作者：

GOSSMANN, HJ

FISANICK, GJ

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1988年 / 6卷 / 03期

关键词：

D O I：

10.1116/1.575595

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：2037 / 2038

页数：2

共 9 条

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[8] INTERFACE FORMATION IN IV-IV HETEROSTRUCTURES - TIN ON SILICON [J].

ZINKEALLMANG, M ;

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :2030-2031

[9] ROLE OF OSTWALD RIPENING IN ISLANDING PROCESSES [J].

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