ION-IMPLANTATION INTO NB/NB OXIDE/PBAUIN JOSEPHSON TUNNEL-JUNCTIONS

被引：3

作者：

RAIDER, SI

CLARK, GJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 07期

关键词：

D O I：

10.1063/1.95369

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：796 / 798

页数：3

共 13 条

[1] TUNNELING BETWEEN SUPERCONDUCTORS [J].

AMBEGAOKAR, V ;

BARATOFF, A .

PHYSICAL REVIEW LETTERS, 1963, 10 (11) :486-&

[2] TUNNELING IN LEAD LEAD JUNCTIONS/ JUNCTIONS [J].

BASAVAIAH, S ;

ELDRIDGE, JM ;

MATISOO, J .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) :457-464

[3]

CLARK GJ, UNPUB ION IMPLANTATI

[4] ISOLATION OF JUNCTION DEVICES IN GAAS USING PROTON BOMBARDMENT [J].

FOYT, AG ;

LINDLEY, WT ;

WOLFE, CM ;

DONNELLY, JP .

SOLID-STATE ELECTRONICS, 1969, 12 (04) :209-&

[5] THEORY OF METAL-INSULATOR-METAL TUNNELING FOR A SIMPLE 2-BAND MODEL [J].

GUNDLACH, KH .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (11) :5005-5010

[6]

Hayakawa H., 1983, JPN J APPL PHYS S, V22, P437

[7] TRIMMING THE CRITICAL CURRENT OF JOSEPHSON-JUNCTIONS [J].

PEI, SS ;

FULTON, TA ;

DUNKLEBERGER, LN ;

KEANE, RA .

IEEE TRANSACTIONS ON MAGNETICS, 1983, 19 (03) :820-822

[8] NB-NB OXIDE-PB-ALLOY JOSEPHSON TUNNEL-JUNCTIONS [J].

RAIDER, SI ;

DRAKE, RE .

IEEE TRANSACTIONS ON MAGNETICS, 1981, 17 (01) :299-302

[9]

RAIDER SI, UNPUB

[10] MOS THRESHOLD SHIFTING BY ION-IMPLANTATION [J].

SIGMON, TW ;

SWANSON, R .

SOLID-STATE ELECTRONICS, 1973, 16 (11) :1217-1232

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