A STUDY OF 2 MEV OXYGEN IMPLANTATION TO FORM DEEPLY BURIED SIO2 LAYERS

被引:12
作者
GROB, JJ [1 ]
GROB, A [1 ]
THEVENIN, P [1 ]
SIFFERT, P [1 ]
DANTERROCHES, C [1 ]
GOLANSKI, A [1 ]
机构
[1] CTR NATL ETUDES TELECOMMUNICAT,F-38243 MEYLAN,FRANCE
关键词
D O I
10.1557/JMR.1989.1227
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:1227 / 1232
页数:6
相关论文
共 24 条
[21]   MECHANISMS OF BURIED OXIDE FORMATION BY ION-IMPLANTATION [J].
WHITE, AE ;
SHORT, KT ;
BATSTONE, JL ;
JACOBSON, DC ;
POATE, JM ;
WEST, KW .
APPLIED PHYSICS LETTERS, 1987, 50 (01) :19-21
[22]  
Winterbon K. B., 1975, ION IMPLANTATION RAN
[23]   PEARSON DISTRIBUTIONS FOR ION RANGES [J].
WINTERBON, KB .
APPLIED PHYSICS LETTERS, 1983, 42 (02) :205-206
[24]  
Ziegler J.F., 1985, STOPPING RANGE IONS