PEARSON DISTRIBUTIONS FOR ION RANGES

被引：20

作者：

WINTERBON, KB

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 02期

关键词：

D O I：

10.1063/1.93850

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：205 / 206

页数：2

共 14 条

[1]

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[4] DESCRIPTION OF ARSENIC AND BORON PROFILES IMPLANTED IN SIO2,SI3N4 AND SI USING PEARSON DISTRIBUTIONS WITH 4 MOMENTS [J].

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[5] ION-IMPLANTED SELENIUM PROFILES IN GAAS AS MEASURED BY SECONDARY ION MASS-SPECTROMETRY [J].

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[6] SOLID SOLUBILITY OF AS IN SI AS DETERMINED BY ION-IMPLANTATION AND CW LASER ANNEALING [J].

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[7]

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[8]

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[9] METASTABLE AS-75 CONCENTRATIONS FORMED BY SCANNED CW E-BEAM ANNEALING OF AS-75-IMPLANTED SILICON [J].

REGOLINI, JL ;

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APPLIED PHYSICS LETTERS, 1979, 35 (02) :114-116

[10] RANGE PARAMETERS OF BORON IMPLANTED INTO SILICON [J].

RYSSEL, H ;

PRINKE, G ;

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HENKELMANN, R .

APPLIED PHYSICS, 1981, 24 (01) :39-43

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