GROWTH OF LOW-CARBON CONTENT ALXGA1-XAS BY REDUCED PRESSURE MOVPE USING TRIMETHYLAMINE ALANE

被引：10

作者：

JONES, AC

RUSHWORTH, SA

机构：

[1] Epichem Limited, Wirral, Merseyside L62 3QF, Power Road, Bromborough

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 107卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90483-L

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

[No abstract available]

引用

页码：350 / 350

页数：1

共 4 条

[1] GROWTH OF ALXGA1-XAS BY REDUCED PRESSURE MOVPE USING TRIMETHYLAMINE ALANE [J].

JONES, AC ;

RUSHWORTH, SA ;

BOHLING, DA ;

MUHR, GT .

JOURNAL OF CRYSTAL GROWTH, 1990, 106 (2-3) :246-252

[2] GROWTH OF ALXGA1-XAS BY MOVPE USING ALTERNATIVE ALKYLALUMINUM PRECURSORS [J].

JONES, AC ;

WRIGHT, PJ ;

OLIVER, PE ;

COCKAYNE, B ;

ROBERTS, JS .

JOURNAL OF CRYSTAL GROWTH, 1990, 100 (03) :395-404

[3] THE INFLUENCE OF GROWTH CHEMISTRY ON THE MOVPE GROWTH OF GAAS AND ALXGA1-XAS LAYERS AND HETEROSTRUCTURES [J].

KUECH, TF ;

VEUHOFF, E ;

KUAN, TS ;

DELINE, V ;

POTEMSKI, R .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :257-271

[4] MOVPE GROWTH OF ALGAAS USING TRIMETHYLAMINE ALANE [J].

ROBERTS, JS ;

BUTTON, CC ;

DAVID, JPR ;

JONES, AC ;

RUSHWORTH, SA .

JOURNAL OF CRYSTAL GROWTH, 1990, 104 (04) :857-860

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