GROWTH OF ALXGA1-XAS BY MOVPE USING ALTERNATIVE ALKYLALUMINUM PRECURSORS

Epitaxial layers of AlxGa1-xAs have been grown using a variety of different aluminium alkyls, in conjunction with trimethylgallium and arsine. These compounds, precursors based on trimethyl and triethylaluminium, have been made, purified, characterised and analysed for residual impurities. Most have vapour pressures suitable for use in MOVPE. Atmospheric pressure MOVPE has then been used to grow layers of AlxGa1-xAs, with compositions 0 ≤ x ≤ 0.4, at temperatures between 700 and 800°C. The layers were characterised both electrically and optically. Low temperature photoluminescence (PL) indicated that carbon, the major impurity in high quality AlxGa1-xAs layers grown by MOVPE, remained the dominant impurity in layers grown using these precursors. © 1990.