THE THEORY OF HOT-ELECTRON PHOTOEMISSION IN SCHOTTKY-BARRIER IR DETECTORS

被引:95
作者
MOONEY, JM [1 ]
SILVERMAN, J [1 ]
机构
[1] USAF,ROME AIR DEV CTR,DIV SOLID STATE SCI,BEDFORD,MA 01731
关键词
D O I
10.1109/T-ED.1985.21905
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:33 / 39
页数:7
相关论文
共 28 条
[11]   PLATINUM SILICIDE SCHOTTKY-BARRIER IR-CCD IMAGE SENSORS [J].
KIMATA, M ;
DENDA, M ;
FUKUMOTO, T ;
TSUBOUCHI, N ;
UEMATSU, S ;
SHIBATA, H ;
HIGUCHI, T ;
SAHEKI, T ;
TSUNODA, R ;
KANNO, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1982, 21 (01) :231-235
[12]   PHOTOEMISSION STUDIES OF NOBLE METALS .2. GOLD [J].
KROLIKOW.WF ;
SPICER, WE .
PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02) :478-&
[13]   MONTE-CARLO CALCULATIONS OF HOT-ELECTRON TRANSPORT IN METAL FILMS WITH SPECIAL REFERENCE TO METAL-BASE TRANSISTOR [J].
LOVELUCK, JM ;
RHODERICK, EH .
SOLID-STATE ELECTRONICS, 1967, 10 (05) :433-+
[14]  
Pellegrini P. W., 1982, International Electron Devices Meeting. Technical Digest, P157
[15]   AN INFRARED DETECTOR UTILIZING INTERNAL PHOTOEMISSION [J].
PETERS, DW .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (05) :704-+
[16]  
PINSKER TN, 1968, SOV PHYS SEMICOND+, V2, P196
[17]   MONTE CARLO CALCULATIONS OF INTERNAL PHOTOEMISSION YIELDS IN M-I-M THIN-FILM STRUCTURES [J].
SCHUERME.FL ;
YOUNG, CR ;
BLASINGA.JM .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (03) :1791-&
[18]  
SEILLER JM, 1971, CR ACAD SCI B PHYS, V273, P773
[19]  
SEILLER JM, 1971, CR ACAD SCI B PHYS, V272, P629
[20]  
SHEPHERD FD, 1979, 7TH S PHOT EL IM DEV