2-DIMENSIONAL NUMERICAL-SIMULATION OF SIDE-GATING EFFECT IN GAAS-MESFETS

被引：38

作者：

GOTO, N

OHNO, Y

YANO, H

机构：

[1] Microelectronics Research Laboratories, NEC Corporation, Kawasaki 213, 4-1-1, Miyazaka, Miyamae-ku

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 08期

关键词：

15;

D O I：

10.1109/16.57132

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two-dimensional device simulations confirm that side-gating effect of GaAs MESFET occurs on semi-insulating substrates containing hole traps. A negative voltage applied on a side gate, a separate n-type doped region, causes an increase in the thickness of the negatively charged layer at the FET channel interface in the substrate, through hole emission from hole traps. The FET drain current is modulated by the emerged negative charges as an electrical field effect. The magnitude of the drain current reduction is determined by the total acceptor concentration in the substrate and the donor concentration of the channel. However, the magnitude will be independent of the side-gate distances. © 1990 IEEE

引用

页码：1821 / 1827

页数：7

共 14 条

[1]

ASADA T, 1988, APPL PHYS LETT, V52, P703

[2] DEPENDENCE OF CHARACTERISTICS OF MOS-TRANSISTORS ON SUBSTRATE RESISTIVITY [J].