ANTIPHASE DOMAIN BOUNDARY SUPPRESSION IN CHALCOPYRITE-ON-SPHALERITE EPITAXY

被引：7

作者：

DAVIS, GA ^{[1
]}

MULLER, MW ^{[1
]}

WOLFE, CM ^{[1
]}

机构：

[1] WASHINGTON UNIV,SEMICOND RES LAB,ST LOUIS,MO 63130

来源：

JOURNAL OF CRYSTAL GROWTH | 1984年 / 69卷 / 01期

关键词：

D O I：

10.1016/0022-0248(84)90021-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：141 / 148

页数：8

共 6 条

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[2] LIQUID-PHASE EPITAXIAL-GROWTH OF ZNSNP2 ON GAAS [J].

DAVIS, GA ;

WOLFE, CM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (06) :1408-1412

[3] POLAR HETEROJUNCTION INTERFACES [J].

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GRANT, RW .

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[4] ON THE (110) ORIENTATION AS THE PREFERRED ORIENTATION FOR THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS ON GE, GAP ON SI, AND SIMILAR ZINCBLENDE-ON-DIAMOND SYSTEMS [J].

KROEMER, H ;

POLASKO, KJ ;

WRIGHT, SC .

APPLIED PHYSICS LETTERS, 1980, 36 (09) :763-765

[5]

Shay J. L., 1975, TERNARY CHALCOPYRITE

[6] POLAR-ON-NONPOLAR EPITAXY - SUB-LATTICE ORDERING IN THE NUCLEATION AND GROWTH OF GAP ON SI (211) SURFACES [J].

WRIGHT, SL ;

INADA, M ;

KROEMER, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :534-539

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