FLICKER NOISE IN HOT-ELECTRON DEGRADED SHORT CHANNEL MOSFETS

被引：18

作者：

STEGHERR, M

机构：

来源：

SOLID-STATE ELECTRONICS | 1984年 / 27卷 / 12期

关键词：

D O I：

10.1016/0038-1101(84)90043-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：1055 / 1056

页数：2

相关论文

共 7 条

[1] LOW FREQUENCY NOISE IN MOS TRANSISTORS .I. THEORY [J].

CHRISTEN.S ;

LUNDSTRO.I ;

SVENSSON, C .

SOLID-STATE ELECTRONICS, 1968, 11 (09) :797-&

[2] LOW-FREQUENCY GENERATION NOISE IN JUNCTION FIELD EFFECT TRANSISTORS [J].

LAURITZEN, PO .

SOLID-STATE ELECTRONICS, 1965, 8 (01) :41-+

[3] HOT-ELECTRON EMISSION FROM SILICON INTO SILICON DIOXIDE [J].

NING, TH .

SOLID-STATE ELECTRONICS, 1978, 21 (01) :273-282

[4] DISCRIMINATION BETWEEN 2 NOISE MODELS IN METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J].

PARK, HS ;

VANDERZIEL, A ;

ZIJLSTRA, RJJ ;

LIU, ST .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) :296-299

[5] INTERFACE STATES IN MOSFETS DUE TO HOT-ELECTRON INJECTION DETERMINED BY THE CHARGE PUMPING TECHNIQUE [J].

SCHMITT, D ;

DORDA, G .

ELECTRONICS LETTERS, 1981, 17 (20) :761-762

[6] SCANNING ELECTRON-MICROSCOPE MEASUREMENTS ON SHORT CHANNEL MOS-TRANSISTORS [J].

WILSON, CL .

SOLID-STATE ELECTRONICS, 1980, 23 (04) :345-&

[7] THEORY OF MOS-TRANSISTOR IN WEAK INVERSION - NEW METHOD TO DETERMINE NUMBER OF SURFACE STATES [J].

VANOVERSTRAETEN, RJ ;

DECLERCK, GJ ;

MULS, PA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (05) :282-288