THERMAL-EQUILIBRIUM PROCESSES IN DOPED AMORPHOUS-SILICON

被引：9

作者：

KAKALIOS, J

STREET, RA

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1987年 / 97-8卷

关键词：

D O I：

10.1016/0022-3093(87)90184-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：767 / 774

页数：8

共 24 条

[1] STRUCTURE AND ELECTRONIC STATES IN DISORDERED-SYSTEMS [J].

BARYAM, Y ;

ADLER, D ;

JOANNOPOULOS, JD .

PHYSICAL REVIEW LETTERS, 1986, 57 (04) :467-470

[2]

Fritzsche H., 1981, FUNDAMENTAL PHYSICS, P1

[3]

JACKSON WG, IN PRESS

[4] ELECTRONIC TRANSPORT IN DOPED AMORPHOUS-SILICON [J].

KAKALIOS, J ;

STREET, RA .

PHYSICAL REVIEW B, 1986, 34 (08) :6014-6017

[5]

KAKALIOS J, IN PRESS P INT C STA

[6]

KAKALIOS J, IN PRESS PHYS REV LE

[7]

KAKALIOS J, IN PRESS MRS P, V95

[8]

MCMAHON TJ, IN PRESS

[9] A CHEMICAL-BOND APPROACH TO DOPING, COMPENSATION AND PHOTOINDUCED DEGRADATION IN AMORPHOUS-SILICON [J].

MULLER, G ;

KALBITZER, S ;

MANNSPERGER, H .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 39 (04) :243-250

[10] ELECTRON-BEAM INDUCED CENTERS IN HYDROGENATED AMORPHOUS-SILICON [J].

SCHADE, H ;

PANKOVE, JI .

JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :327-330

← 1 2 3 →