MASS-TRANSFER ANALYSIS OF A-SI-H DEPOSITION BY THE GLOW-DISCHARGE PROCESS

被引：9

作者：

CHEN, I

JANSEN, F

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1983年 / 59-6卷 / DEC期

关键词：

D O I：

10.1016/0022-3093(83)90266-1

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：695 / 698

页数：4

共 7 条

[1] MASS-TRANSFER ANALYSES OF THE PLASMA DEPOSITION PROCESS [J].

CHEN, I .

THIN SOLID FILMS, 1983, 101 (01) :41-53

[2]

MORT J, 1980, PHOTOGR SCI ENG, V24, P241

[3] PLASMA-PROMOTED DEPOSITION OF THIN INORGANIC FILMS [J].

RAND, MJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02) :420-427

[4] ALPHA-SI-H IN ELECTROPHOTOGRAPHY AND VIDICON DEVICES [J].

SHIMIZU, I ;

ODA, S ;

SAITO, K ;

TOMITA, H ;

INOUE, E .

JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :1123-1130

[5] SOME NEW DEVELOPMENTS IN THE FIELD OF AMORPHOUS-SILICON SOLAR-CELLS [J].

SPEAR, WE ;

GIBSON, RA ;

YANG, D ;

LECOMBER, PG ;

MULLER, G ;

KALBITZER, S .

JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :1143-1153

[6] REACTION-MECHANISMS OF THE RADIO-FREQUENCY GLOW-DISCHARGE DEPOSITION PROCESS IN SILANE-HELIUM [J].

TURBAN, G ;

CATHERINE, Y ;

GROLLEAU, B .

THIN SOLID FILMS, 1979, 60 (02) :147-155

[7] PHOTOELECTRIC PROPERTIES OF GD A-SI-H MONOLAYER FILMS FOR ELECTROPHOTOGRAPHIC APPLICATIONS [J].

YAMAMOTO, N ;

WAKITA, K ;

NAKAYAMA, Y ;

KAWAMURA, T .

JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :495-498

← 1 →