THICKNESS DEPENDENCE OF STAEBLER-WRONSKI EFFECT IN A-SI-H

被引：18

作者：

KAKINUMA, H

NISHIKAWA, S

WATANABE, T

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1983年 / 59-6卷 / DEC期

关键词：

D O I：

10.1016/0022-3093(83)90610-5

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：421 / 424

页数：4

共 8 条

[1]

AST DS, 1980, J NONCRYSTALLINE SOL, V35, P661

[2] LIGHT-INDUCED DANGLING BONDS IN HYDROGENATED AMORPHOUS-SILICON [J].

DERSCH, H ;

STUKE, J ;

BEICHLER, J .

APPLIED PHYSICS LETTERS, 1981, 38 (06) :456-458

[3]

Johnson G. O., 1981, AIP Conference Proceedings, P329, DOI 10.1063/1.33058

[4] LIGHT-INDUCED EFFECTS IN SCHOTTKY DIODES ON HYDROGENATED AMORPHOUS-SILICON [J].

JOUSSE, D ;

BASSET, R ;

DELIONIBUS, S ;

BOURDON, B .

APPLIED PHYSICS LETTERS, 1980, 37 (02) :208-211

[5] OBSERVATION OF PHOTOINDUCED CHANGES IN THE BULK-DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON [J].

LANG, DV ;

COHEN, JD ;

HARBISON, JP ;

SERGENT, AM .

APPLIED PHYSICS LETTERS, 1982, 40 (06) :474-476

[6]

NITTA S, 1981, J PHYS, P403

[7] INFLUENCE OF INTERFACE CHARGES ON TRANSPORT MEASUREMENTS IN AMORPHOUS SILICON FILMS [J].

SOLOMON, I ;

DIETL, T ;

KAPLAN, D .

JOURNAL DE PHYSIQUE, 1978, 39 (11) :1241-1246

[8] OPTICALLY INDUCED CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED HYDROGENATED AMORPHOUS-SILICON [J].

STAEBLER, DL ;

WRONSKI, CR .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3262-3268

← 1 →