DIRECT COMPARISON OF QUANTIZED HALL RESISTANCE BETWEEN SI-MOSFET AND GAAS/ALGAAS HETEROSTRUCTURE DEVICES ON THE SAME SAMPLE HOLDER

被引：3

作者：

SHIDA, K

WADA, T

NISHINAKA, H

IGARASHI, T

机构：

[1] Electrotechnical Lab, Niihari, Jpn, Electrotechnical Lab, Niihari, Jpn

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1986年 / 25卷 / 01期

关键词：

D O I：

10.1143/JJAP.25.L63

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L63 / L65

页数：3

共 6 条

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IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 1985, 34 (02) :304-305

[2] A TEST OF THE QUANTUM HALL-EFFECT AS A RESISTANCE STANDARD [J].

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IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 1985, 34 (02) :301-303

[3] A MEASUREMENT SYSTEM FOR THE DETERMINATION OF H/E2 IN TERMS OF THE SL OHM AND THE MAINTAINED OHM AT THE NPL [J].

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[4] APPLICATION OF THE QUANTIZED HALL-EFFECT TO A NEW RESISTANCE STANDARD AT VSL [J].

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MOOIJ, JE .

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 1985, 34 (02) :314-316

[5]

VONKLITZING K, 1980, PHYS REV LETT, V45, P494, DOI 10.1103/PhysRevLett.45.494

[6] STUDY OF THE QUANTIZED HALL-EFFECT AS A RESISTANCE STANDARD AT ETL [J].

WADA, T ;

SHIDA, K ;

NISHINAKA, H ;

IGARASHI, T .

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 1985, 34 (02) :306-309

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