STUDY OF THE QUANTIZED HALL-EFFECT AS A RESISTANCE STANDARD AT ETL

被引：10

作者：

WADA, T

SHIDA, K

NISHINAKA, H

IGARASHI, T

机构：

来源：

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT | 1985年 / 34卷 / 02期

关键词：

D O I：

10.1109/TIM.1985.4315331

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：306 / 309

页数：4

共 9 条

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[9] QUANTIZED HALL RESISTIVITY IN SI-MOSFETS MEASURED AT LIQ - HE-3 TEMPERATURES [J].

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