MEASUREMENTS OF HETEROJUNCTIONS ALLOYED ON TO GAAS

[1] THERMAL, ELECTRICAL AND OPTICAL PROPERTIES OF (IN,GA)AS ALLOYS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 10 (2-3) : 204 - 210

[2] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &

[3] BURDUKOV YM, 1964, RADIO ENGNG ELECTRON, V10, P401

[4] HETEROJUNCTIONS BY ALLOYING [J]. SOLID-STATE ELECTRONICS, 1965, 8 (01) : 1 - &

[5] EFFECT OF CRYSTAL ORIENTATION ON GE-GAAS HETEROJUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) : 612 - &

[6] Newman P. C., 1965, ELECTRON LETT, V1, P265

[7] N-N SEMICONDUCTOR HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1963, 6 (02) : 121 - 132

[8] INTERFACE STATES IN ABRUPT SEMICONDUCTOR HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1964, 7 (02) : 153 - 165

[9] PRICE PJ, 1962, JUL P INT C PHYS SEM, P99

[10] FORWARD BIAS CURRENT-VOLTAGE CHARACTERISTICS FOR A HETEROJUNCTION IN WHICH TUNNELLING DOMINATES [J]. PHYSICA STATUS SOLIDI, 1966, 18 (01): : 105 - &

[1] THERMAL, ELECTRICAL AND OPTICAL PROPERTIES OF (IN,GA)AS ALLOYS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 10 (2-3) : 204 - 210

[2] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &

[3] BURDUKOV YM, 1964, RADIO ENGNG ELECTRON, V10, P401

[4] HETEROJUNCTIONS BY ALLOYING [J]. SOLID-STATE ELECTRONICS, 1965, 8 (01) : 1 - &

[5] EFFECT OF CRYSTAL ORIENTATION ON GE-GAAS HETEROJUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) : 612 - &

[6] Newman P. C., 1965, ELECTRON LETT, V1, P265

[7] N-N SEMICONDUCTOR HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1963, 6 (02) : 121 - 132

[8] INTERFACE STATES IN ABRUPT SEMICONDUCTOR HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1964, 7 (02) : 153 - 165

[9] PRICE PJ, 1962, JUL P INT C PHYS SEM, P99

[10] FORWARD BIAS CURRENT-VOLTAGE CHARACTERISTICS FOR A HETEROJUNCTION IN WHICH TUNNELLING DOMINATES [J]. PHYSICA STATUS SOLIDI, 1966, 18 (01): : 105 - &