ELECTRON-TRANSPORT IN STRAINED SI LAYERS ON SI1-XGEX SUBSTRATES

被引:121
作者
VOGELSANG, T
HOFMANN, KR
机构
[1] Corporate Research and Development, ZFE BT ACM 3, 8000 Munich 83
关键词
D O I
10.1063/1.110394
中图分类号
O59 [应用物理学];
学科分类号
摘要
Results on the in-plane electron drift velocities and mobilities in strained Si layers grown on Si1-xGex substrates are reported for 300 and 77 K. High-field drift velocities are calculated by Monte Carlo simulations and low-field mobilities by numerical solution of Boltzmann's equation including intra- and intervalley phonon and impurity scattering mechanisms. Significant improvements of drift velocities relative to bulk Si are found for electric fields up to several 10 kV/cm, while saturation occurs at the bulk values for both temperatures. A much stronger mobility enhancement of 74% is obtained at 300 K compared to 36% at 77 K, which is consistent with recent experimental results.
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页码:186 / 188
页数:3
相关论文
共 15 条
[1]   ELECTRON DRIFT VELOCITY IN SILICON [J].
CANALI, C ;
JACOBONI, C ;
NAVA, F ;
OTTAVIANI, G ;
ALBERIGIQUARANTA, A .
PHYSICAL REVIEW B, 1975, 12 (06) :2265-2284
[2]   MONTE-CARLO ANALYSIS OF ELECTRON-TRANSPORT IN SMALL SEMICONDUCTOR-DEVICES INCLUDING BAND-STRUCTURE AND SPACE-CHARGE EFFECTS [J].
FISCHETTI, MV ;
LAUX, SE .
PHYSICAL REVIEW B, 1988, 38 (14) :9721-9745
[3]   HIGH-TRANSCONDUCTANCE N-TYPE SI/SIGE MODULATION-DOPED FIELD-EFFECT TRANSISTORS [J].
ISMAIL, K ;
MEYERSON, BS ;
RISHTON, S ;
CHU, J ;
NELSON, S ;
NOCERA, J .
IEEE ELECTRON DEVICE LETTERS, 1992, 13 (05) :229-231
[4]   HIGH ELECTRON-MOBILITY IN MODULATION-DOPED SI/SIGE [J].
ISMAIL, K ;
MEYERSON, BS ;
WANG, PJ .
APPLIED PHYSICS LETTERS, 1991, 58 (19) :2117-2119
[5]  
ISMAIL K, COMMUNICATION
[6]   THE MONTE-CARLO METHOD FOR THE SOLUTION OF CHARGE TRANSPORT IN SEMICONDUCTORS WITH APPLICATIONS TO COVALENT MATERIALS [J].
JACOBONI, C ;
REGGIANI, L .
REVIEWS OF MODERN PHYSICS, 1983, 55 (03) :645-705
[7]   ENHANCEMENT MODE N-CHANNEL SI/SIGE MODFET WITH HIGH INTRINSIC TRANSCONDUCTANCE [J].
KONIG, U ;
BOERS, AJ ;
SCHAFFLER, F ;
KASPER, E .
ELECTRONICS LETTERS, 1992, 28 (02) :160-162
[8]   EXTREMELY HIGH ELECTRON-MOBILITY IN SI/GEXSI1-X STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].
MII, YJ ;
XIE, YH ;
FITZGERALD, EA ;
MONROE, D ;
THIEL, FA ;
WEIR, BE ;
FELDMAN, LC .
APPLIED PHYSICS LETTERS, 1991, 59 (13) :1611-1613
[9]  
NELSON SF, 1992, UNPUB JUN EL MAT C C