1/F-ALPHA NOISE AND FABRICATION VARIATIONS OF TIW/A1 VLSI INTERCONNECTIONS

被引：12

作者：

COTTLE, JG ^{[1
]}

KLONARIS, NS ^{[1
]}

BORDELON, M ^{[1
]}

机构：

[1] HARRIS SEMICOND INC,MELBOURNE,FL 32901

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 11期

关键词：

D O I：

10.1109/55.63020

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Noise measurements were utilized to detect differences in fabrication processes on the layered TiW/Al metallization system. A dual-channel ac bridge system was used to measure the current noise of packaged 1.8-μm-wide thin-film interconnections fabricated by a variety of processing parameters. The quick, nondestructive noise measurements were able to discriminate relative film group reliabilities and correlated well with results obtained from more conventional median-time-to-failure (MTF) testing. © 1990 IEEE

引用

页码：523 / 525

页数：3

共 8 条

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