THE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF CUINSE2

被引：30

作者：

JONES, PA ^{[1
]}

JACKSON, AD ^{[1
]}

LICKISS, PD ^{[1
]}

PILKINGTON, RD ^{[1
]}

TOMLINSON, RD ^{[1
]}

机构：

[1] UNIV SALFORD,DEPT CHEM & APPL CHEM,SALFORD M5 4WT,LANCS,ENGLAND

来源：

THIN SOLID FILMS | 1994年 / 238卷 / 01期

关键词：

D O I：

10.1016/0040-6090(94)90638-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the first successful chemical vapour deposition (CVD) of chalcopyrite CuInSe2. Thin films with compositions around the Cu:In:Se stoichiometric ratio 1:1:2 have been grown using a glow discharge enhanced CVD process. Film structure is analysed using X-ray camera techniques and Rutherford backscattering spectroscopy.

引用

页码：4 / 7

页数：4

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