FURTHER EVIDENCE FOR THE C-LINE PSEUDODONOR MODEL IN IRRADIATED CZOCHRALSKI-GROWN SILICON

被引:12
作者
KLEVERMAN, M [1 ]
FORNELL, JO [1 ]
OLAJOS, J [1 ]
GRIMMEISS, HG [1 ]
LINDSTROM, JL [1 ]
机构
[1] NATL DEF RES INST, S-58111 LINKOPING, SWEDEN
来源
PHYSICAL REVIEW B | 1988年 / 37卷 / 17期
关键词
D O I
10.1103/PhysRevB.37.10199
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:10199 / 10202
页数:4
相关论文
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