0.79 EV (C-LINE) DEFECT IN IRRADIATED OXYGEN-RICH SILICON - EXCITED-STATE STRUCTURE, INTERNAL STRAIN AND LUMINESCENCE DECAY TIME

被引：52

作者：

THONKE, K

HANGLEITER, A

WAGNER, J

SAUER, R

机构：

[1] FRAUNHOFER INST ANGEW FESTKORPERPHYS,D-7800 FREIBURG,FED REP GER

[2] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1985年 / 18卷 / 26期

关键词：

D O I：

10.1088/0022-3719/18/26/005

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：L795 / L801

页数：7

共 16 条

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[8]

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