ANNEALING BEHAVIOR OF QUENCH-DEPOSITED AMORPHOUS GETE AND SNTE FILMS

被引：6

作者：

BROWN, RW ^{[1
]}

机构：

[1] USN,CTR SURFACE WEAP,SILVER SPRING,MD 20910

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1977年 / 24卷 / 01期

关键词：

D O I：

10.1016/0022-3093(77)90067-9

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：131 / 136

页数：6

共 15 条

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[4]

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[7] EFFECT OF ANNEALING ON AN AMORPHOUS GEXTE1-X MATRIX WITH TE CRYSTALLITES [J].

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[8]

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[9] PHOTOCONDUCTIVITY AND DENSITY OF STATES FOR AMORPHOUS GETE [J].

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[10] STRUCTURAL, ELECTRICAL, AND OPTICAL-PROPERTIES OF THERMALLY EVAPORATED AMORPHOUS GEXTE1-X FILMS [J].

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