DOPING AND CRYSTALLOGRAPHIC EFFECTS IN CL-ATOM ETCHING OF SILICON

被引:76
作者
OGRYZLO, EA [1 ]
IBBOTSON, DE [1 ]
FLAMM, DL [1 ]
MUCHA, JA [1 ]
机构
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
关键词
D O I
10.1063/1.345388
中图分类号
O59 [应用物理学];
学科分类号
摘要
Absolute rates for the intrinsic reaction between Cl atoms and surfaces of P-doped polycrystalline silicon, P-doped Si(100) and As, Sb-doped Si(111) substrates were measured for the first time as a function of dopant concentration (Ne) and substrate temperature in a downstream reaction system. This study clearly shows that when there is no ion bombardment, increasing Ne increases the Si-Cl reaction rate even when silicon is lightly doped (∼1015 cm-3), in contrast to in-discharge studies. Moreover, results showed that crystal orientation influences the Cl-Si reaction more than Ne, for N e<1020 cm-3. The data are fitted to a modified Arrhenius expression, R=νNγ enClT1/2e -E/kT, with R the etch rate and nCl the gas phase Cl concentration. The calculated values of the activation energy E are 4.1-4.7 kcal/mole for all doping levels and crystallographic orientations. Therefore, the doping effect is manifested solely in the preexponential (νN γe) of the Arrhenius expression, and the data qualitatively agree with a charge-transfer mechanism which facilitates chemisorption of chlorine.
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页码:3115 / 3120
页数:6
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共 33 条
[1]  
APPELMAN EH, 1975, JCS F1, V71, P704
[2]  
AWAYA N, 1984, 6TH P S DRY PROC TOK, P98
[3]   HALOGEN-ATOM REACTIONS .2. LUMINESCENCE FROM RECOMBINATION OF CHLORINE ATOMS [J].
BADER, LW ;
OGRYZLO, EA .
JOURNAL OF CHEMICAL PHYSICS, 1964, 41 (09) :2926-&
[4]   EFFECTS OF DOPING ON POLYSILICON ETCH RATE IN A FLUORINE-CONTAINING PLASMA [J].
BALDI, L ;
BEARDO, D .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) :2221-2225
[5]  
Beadle W. E., 1985, QUICK REFERENCE MANU, P1
[6]  
Becker R., 1984, INTERACTIVE ENV DATA
[7]   DRY ETCHING OF N-TYPE AND P-TYPE POLYSILICON - PARAMETERS AFFECTING THE ETCH RATE [J].
BERG, S ;
NENDER, C ;
BUCHTA, R ;
NORSTROM, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :1600-1603
[8]   HALOGEN ATOM REACTIONS .4. RECOMBINATION INTO ELECTRONICALLY EXCITED STATES [J].
BROWNE, RJ ;
OGRYZLO, EA .
JOURNAL OF CHEMICAL PHYSICS, 1970, 52 (11) :5774-&
[9]  
CABRAL SM, 1983, EXTENDED ABSTRACTS E, V831, P246
[10]   SURFACE AND INTERFACE DEPLETION CORRECTIONS TO FREE CARRIER-DENSITY DETERMINATIONS BY HALL MEASUREMENTS [J].
CHANDRA, A ;
WOOD, CEC ;
WOODARD, DW ;
EASTMAN, LF .
SOLID-STATE ELECTRONICS, 1979, 22 (07) :645-650