EPITAXY IN LIQUID-PHASE OF COMPOUNDS III-V ON INP SUBSTRATE

被引：4

作者：

LINH, NT ^{[1
]}

HOMBROUCK, JP ^{[1
]}

SOL, N ^{[1
]}

机构：

[1] THOMSON CSF,LAB CENT RECH,91401 ORSAY,FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1975年 / 31卷 / DEC期

关键词：

D O I：

10.1016/0022-0248(75)90132-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：204 / 209

页数：6

共 11 条

[1]

BACHMAN KJ, 1974, 5TH INT S GALL ARS R

[2] SUBSTRATE ORIENTATION AND SURFACE MORPHOLOGY OF GAAS LIQUID-PHASE EPITAXIAL LAYERS [J].

BAUSER, E ;

FRIK, M ;

LOECHNER, KS ;

SCHMIDT, L ;

ULRICH, R .

JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :148-153

[3] MAGNESIUM-DOPED GAAS AND ALXGA1-XAS BY MOLECULAR-BEAM EPITAXY [J].

CHO, AY ;

PANISH, MB .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) :5118-5123

[4] 3-LEVEL OSCILLATOR - A NEW FORM OF TRANSFERRED-ELECTRON DEVICE [J].

HILSUM, C ;

REES, HD .

ELECTRONICS LETTERS, 1970, 6 (09) :277-&

[5]

HSIEH JJ, 1974, J CRYST GROWTH, V27, P49, DOI 10.1016/0022-0248(74)90418-7

[6] METALLOGRAPHIC DEVELOPMENT OF CRYSTAL DEFECTS IN INP [J].

HUBER, A ;

LINH, NT .

JOURNAL OF CRYSTAL GROWTH, 1975, 29 (01) :80-84

[7] PHOTOEMISSION FROM CESIUM-OXIDE-ACTIVATED IN GAASP [J].

JAMES, LW ;

ANTYPAS, GA ;

MOON, RL ;

EDGECUMBE, J ;

BELL, RL .

APPLIED PHYSICS LETTERS, 1973, 22 (06) :270-271

[8]

LINH NT, UNPUBLISHED

[9] AUGER-ELECTRON SPECTROSCOPY [J].

RIVIERE, JC .

CONTEMPORARY PHYSICS, 1973, 14 (06) :513-539

[10] PREPARATION AND PROPERTIES OF CDSNP2/INP HETEROJUNCTIONS GROWN BY LPE FROM SN SOLUTION [J].

SHAY, JL ;

BACHMAN, KJ ;

BUEHLER, E .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) :1302-1310

← 1 2 →