RESISTIVITY AND CHANNELING STUDIES OF ION-IMPLANTED NIP AND COP SYSTEMS

被引：5

作者：

THOME, L ^{[1
]}

MENDOZAZELIS, L ^{[1
]}

BROSSARD, L ^{[1
]}

KROLAS, K ^{[1
]}

COHEN, C ^{[1
]}

CHAUMONT, J ^{[1
]}

BERNAS, H ^{[1
]}

机构：

[1] UNIV PARIS 7,ECOLE NORM SUPER,PHYS SOLIDES GRP,F-75005 PARIS,FRANCE

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1982年 / 199卷 / 1-2期

关键词：

D O I：

10.1016/0167-5087(82)90249-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Electric properties

引用

页码：437 / 440

页数：4

共 6 条

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[2] A MEDIUM ENERGY FACILITY FOR VARIABLE TEMPERATURE IMPLANTATION AND ANALYSIS [J].

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NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1981, 189 (01) :193-198

[3] ELECTRICAL-RESISTIVITY OF AMORPHOUS NICKEL PHOSPHORUS ALLOYS [J].

COTE, PJ .

SOLID STATE COMMUNICATIONS, 1976, 18 (9-10) :1311-1313

[4]

DUMOULIN L, 1975, THESIS U PARIS SUD

[5] TDPAC-STUDY OF AMORPHOUS NIP ALLOY PRODUCED BY ION-IMPLANTATION [J].

THOME, L ;

BERNAS, H ;

HEUBES, P ;

DEICHER, M ;

RECKNAGEL, E .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1982, 199 (1-2) :431-435

[6] FORMATION OF EPITAXIAL NIO BY OXYGEN IMPLANTATION IN [100] NI [J].

TOSIC, MM ;

DRIGO, AV ;

COHEN, C ;

THOME, L ;

CHAUMONT, J ;

BERNAS, H ;

CARNERA, A .

NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :303-313

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