STRESS MEASUREMENTS IN SILICON SUBSTRATES WITH TISI2 PATTERNS USING RAMAN MICROPROBE

The horizontal and depth distributions of the stress induced in silicon substrates with titanium silicide (TiSi2) patterns were evaluated using the Raman microprobe. Tensile stress is generated beside the TiSi2 pattern. The tensile stress reaches a maximum value of 150-350 MPa at the distance of similar to 0.5 mu m from the edge of the TiSi2 pattern, and the range of the tensile stress is as far as 2-4 mu m from the edge. Under the TiSi2 pattern, compressive stress is generated. The compressive stress becomes a maximum value of 25-75 MPa at the TiSi2/Si interface, and the depth of the compressive stress extends to 2-1 mu m.