DETERMINATION OF THE NITROGEN DOPING OF LIQUID-PHASE EPITAXY GAP AND GAXIN1-XP ALLOYS BY OPTICAL-ABSORPTION AND PHOTO-LUMINESCENCE

被引：18

作者：

THIERRYMIEG, V ^{[1
]}

MARBEUF, A ^{[1
]}

CHEVALLIER, J ^{[1
]}

MARIETTE, H ^{[1
]}

BUGAJSKI, M ^{[1
]}

KAZMIERSKI, K ^{[1
]}

机构：

[1] INST ELECTRON TECHNOL,PL-02669 WARSAW,POLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 09期

关键词：

D O I：

10.1063/1.332713

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5358 / 5362

页数：5

共 21 条

[1]

BUGAJSKI M, 1979, P INT C RAD RECOMBIN, P22

[2]

BUGAJSKI M, 1981, UNPUB SEP INT SCH SE

[3] FLUORESCENT DECAY TIMES OF EXCITONS BOUND TO ISOELECTRONIC TRAPS IN GAP AND ZNTE [J].

CUTHBERT, JD ;

THOMAS, DG .

PHYSICAL REVIEW, 1967, 154 (03) :763-&

[4]

DISHMAN JM, 1971, PHYS REV B, V3, P2581

[5] ACCURATE DETERMINATION OF COMPOSITION OF GA1-XINXP(0 LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 0,10) EPITAXIAL LAYERS [J].

ETCHEBERRY, A ;

MARBEUF, A ;

ROMMELUERE, M ;

RIOUX, J .

JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1980, 13 (DEC) :513-515

[6] CORRELATION BETWEEN NITROGEN CONCENTRATION AND IN CONTENT IN INXGA1-XP LIQUID-PHASE EPITAXY LAYERS [J].

GREMBOWICZ, JT ;

PASTUSZKA, B ;

KANIEWSKI, J ;

MROZIEWICZ, B .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) :1818-1819

[7] NITROGEN DOPING PROFILES IN GALLIUM-PHOSPHIDE GROWN BY LIQUID-PHASE EPITAXY [J].

HAYES, TJ ;

MOTTRAM, A ;

PEAKER, AR .

JOURNAL OF CRYSTAL GROWTH, 1979, 46 (01) :59-68

[8] NITROGEN CONCENTRATION IN GAP MEASURED BY OPTICAL-ABSORPTION AND BY PROTON-INDUCED NUCLEAR-REACTIONS [J].

LIGHTOWL.EC ;

NORTH, JC ;

LORIMOR, OG .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (05) :2191-2200

[9] ELECTROLUMINESCENCE IN GAASXP1-X, INXGA1-XP, AND ALXGA1-XP JUNCTIONS WITH X LESS THAN OR APPROXIMATELY EQUAL TO 0.01 [J].

LOGAN, RA ;

DEAN, PJ ;

WHITE, HG ;

WIEGMANN, W .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (06) :2328-&

[10] EFFICIENT GREEN ELECTROLUMINESCENT JUNCTIONS IN GAP [J].

LOGAN, RA ;

WHITE, HG ;

WIEGMANN, W .

SOLID-STATE ELECTRONICS, 1971, 14 (01) :55-&

← 1 2 3 →