METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION OF COPPER AND COPPER(I) OXIDE - KINETICS AND REACTION-MECHANISMS IN THE PRESENCE OF OXYGEN

The kinetics and the mechanisms of the deposition processes of copper and copper oxide by chemical vapor deposition from the Cu(acac)(2) precursor were studied in a horizontal flow, low-pressure MOCVD reactor in the oxygen partial. pressure range of 0-3.74 Torr. The nature and the deposition rate of films were determined under different operating conditions (e.g., reactant composition). At 573 K under high P-O2 and low P(Cu(acac)2) values, copper(I) oxide is the main product. At low P-O2 and high P(Cu(acac)2) values, metallic copper, containing carbon contamination, is formed. It is remarkable that for almost singular lao, and P(Cu(acac)2) values (0.92 and 1.58 x 10(-3) Torr, respectively) pure metallic copper fi ee from carbon contaminations was obtained. A reaction mechanism based on the dissociative adsorption of Cu(acac)(2) on two different kinds of active sites has been proposed to explain the chemical nature of the films as well as the complex kinetics of the deposition process.