PHOSPHORUS DOPING IN LOW-TEMPERATURE SILICON MOLECULAR-BEAM EPITAXY

Phosphorus doping with silicon molecular beam epitaxy was studied using a novel design of a solid doping source based on evaporation of highly doped silicon. Doping concentrations up to the level of the source material are possible. Bulklike Hall mobilities can be achieved. No memory effect was detectable in the course of this work. Phosphorus incorporation in the growing silicon film was investigated with secondary ion mass spectrometry. A drastic increase of segregation with growth temperature was found between 320 and 540-degrees-C. This temperature range represents a kinetically limited regime, which also explains the observed enhancement of segregation with reduced growth rate.