EFFECT OF UNIAXIAL STRESS ON GERMANIUM P-N JUNCTIONS .2.

被引：14

作者：

IMAI, T

UCHIDA, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1965年 / 4卷 / 06期

关键词：

D O I：

10.1143/JJAP.4.409

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：409 / &

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[1] ANISOTROPIC STRESS EFFECT ON EXCESS CURRENT IN TUNNEL DIODES
BERNARD, W
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ROTH, H
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) : 1860 - &
[2] EFFECT OF UNIAXIAL STRESS ON GERMANIUM P-N JUNCTIONS
IMAI, T
UCHIDA, M
SATO, H
KOBAYASHI, A
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1965, 4 (02) : 102 - +
[3] SIMPLE METHOD FOR CALCULATING TUNNELING CURRENT OF AN ESAKI DIODE
KARLOVSKY, J
[J]. PHYSICAL REVIEW, 1962, 127 (02): : 419 - &
[4] MINORITY CARRIER LIFETIME IN UNIAXIALLY STRESSED GERMANIUM
MATUKURA, Y
MIURA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1965, 4 (01) : 72 - &
[5] RESISTANCE OF ELASTICALLY DEFORMED SHALLOW P-N JUNCTIONS .2.
RINDNER, W
BRAUN, I
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (07) : 1958 - &
[6] EFFECT OF MECHANICAL STRESS ON P-N JUNCTION DEVICE CHARACTERISTICS
WORTMAN, JJ
BURGER, RM
HAUSER, JR
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (07) : 2122 - &