LEED FROM EPITAXIAL SURFACES

被引：44

作者：

HENZLER, M

机构：

[1] Institut für Festkörperphysik der Universität, D-30167 Hannover

来源：

SURFACE SCIENCE | 1993年 / 298卷 / 2-3期

关键词：

D O I：

10.1016/0039-6028(93)90050-T

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

During epitaxial growth in ultra-high vacuum many parameters of growing films are derived from the spot profile of low-energy electron diffraction (SPA-LEED). The growth mode, the vertical and latteral distribution of the deposited material, is determined for homoepitaxy. Additionally, the lattice constant and special film defects, as facetting or mosaics, are quantitatively derived for heteroepitaxy by a careful analysis of the diffraction profiles.

引用

页码：369 / 377

页数：9

共 22 条

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