DEPENDENCE ON UNIAXIAL-STRESS OF DEEP LEVELS IN III-V-COMPOUND AND GROUP-IV ELEMENTAL SEMICONDUCTORS

被引：4

作者：

JENKINS, DW ^{[1
]}

REN, SY ^{[1
]}

DOW, JD ^{[1
]}

机构：

[1] UNIV NOTRE DAME,DEPT PHYS,NOTRE DAME,IN 46556

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.39.7881

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7881 / 7894

页数：14

共 19 条

[1]

[Anonymous], ELECTRONIC STRUCTURE

[2] EXTENDED X-RAY ABSORPTION FINE-STRUCTURE STUDIES OF SEMICONDUCTOR STRUCTURE [J].

BUNKER, BA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (05) :3003-3008

[3] ELECTRON SPIN RESONANCE EXPERIMENTS ON DONORS IN SILICON .1. ELECTRONIC STRUCTURE OF DONORS BY THE ELECTRON NUCLEAR DOUBLE RESONANCE TECHNIQUE [J].

FEHER, G .

PHYSICAL REVIEW, 1959, 114 (05) :1219-1244

[4] BOND-ORBITAL MODEL .2. [J].

HARRISON, WA ;

CIRACI, S .

PHYSICAL REVIEW B, 1974, 10 (04) :1516-1527

[5] THEORY OF SUBSTITUTIONAL DEEP TRAPS IN COVALENT SEMICONDUCTORS [J].

HJALMARSON, HP ;

VOGL, P ;

WOLFORD, DJ ;

DOW, JD .

PHYSICAL REVIEW LETTERS, 1980, 44 (12) :810-813

[6] HYDROSTATIC-PRESSURE DEPENDENCIES OF DEEP IMPURITY LEVELS IN ZINCBLENDE SEMICONDUCTORS [J].

HONG, RD ;

JENKINS, DW ;

REN, SY ;

DOW, JD .

PHYSICAL REVIEW B, 1988, 38 (17) :12549-12555

[7] NITROGEN ISOELECTRONIC TRAP IN GAAS1-XPX .2. MODEL CALCULATION OF ELECTRONIC STATES N-GAMMA AND NX AT LOW-TEMPERATURE [J].

HSU, WY ;

DOW, JD ;

WOLFORD, DJ ;

STREETMAN, BG .

PHYSICAL REVIEW B, 1977, 16 (04) :1597-1615

[8]

KAPLYANSKY AA, 1964, OPT SPEKTROSK+, V16, P1031

[9]

KLEINMAN L, 1962, PHYS REV, V128, P2641

[10]

Landau L.D., 1986, THEORY ELASTICITY, P32

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